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Press Releases
» Government - February 2010
Government - February 2010
Feb 25, 2010
METI
MONODZUKURI EXHIBITION
Feb 22, 2010
METI
Asia Green IT Seminar
Feb 19, 2010
Cabinet
"How Does Climate Policy Affect Technical Change? ?An Analysis of the Direction and Pace of Technical Progress in a Climate-Economy Model" (Fondazione Eni Enrico Mattei)
Feb 19, 2010
METI
Improvement of the Program to Promote the Spread of Green Home Appliances by Utilizing Eco-Points
Feb 16, 2010
JETRO
Japan-China Trade in 2009 Declines for the First Time in 11 years
Feb 16, 2010
METI
Submit your ideas for Japan's future IT policy!
Feb 15, 2010
METI
Implementation Status of the Program to Promote the Spread of Green Home Appliances by Utilizing Eco-Points (as of the end of January)
Feb 08, 2010
METI
ENEX2010 to be held in Tokyo - Aiming at the ¡ÆLow Carbon Society' - Building Firm Technology and Future -
Feb 05, 2010
METI
International workshops on the carbon footprint of products
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JSR, TEL, Ibiden launch lithium-ion capacitor R&D project
Sony to boost CMOS image sensor production by 40%
23 companies form harvesting device consortium
Panasonic to complete absorption of IPS Alpha by renaming it
Toshiba starts 24nm NAND chip fabrication
Business
JSR, TEL, Ibiden launch lithium-ion capacitor R&D project
Sony to boost CMOS image sensor production by 40%
23 companies form harvesting device consortium
Japan's first commercial mega solar plant starts operation
Panasonic to complete absorption of IPS Alpha by renaming it
Technology
Toshiba starts 24nm NAND chip fabrication
Canon develops over-11-inch, 120-megapixel, CMOS sensors
Hayabusa 2 will leave Earth in 2014 seeking the origin of life
Samsung, Toshiba intending to standardize high-speed SSD interface
Sony, Tohoku University develops 100W output blue-violet laser
New Products
SD card achieves 95MB/sec read speed
Sharp to introduce LED ceiling lights attuned to demand in Japan
Nichia starts sampling 510nm green laser
Ushio offering 6-inch wafer one-shot exposure system for LED chips
MHI bonds SiC and GaN with silicon wafer at room temperature
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